Si3N4

Si3N4陶瓷基片

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Technical Parameter

  Silicon nitride ceramics are an inorganic material that does not shrink during sintering.It is made of silicon powder as a raw material. First, the desired shape is made by the usual molding method,  then preliminary azotized in nitrogen under 1200℃, so that a part of the silicon powder reacts with nitrogen to generate silicon nitride, and then a second azotizing in a high temperature furnace of 1350℃ to 1450℃ to react into silicon nitride. Silicon nitride with 99% theoretical density can be made by thermal pressure sintering method. The thermal conductivity of Si3N4 ceramics at room temperature ranges from 10 to 16 W.m-1.K-1.

  

Molecular formula

Si3N4

Relative molecular mass

140.28

Color

Gray, gray black

Crystal system

hexahedral

Preparation method

heat pressing

Relative density

99.5%

Density

3.2+/-0.02 g/cm3

Moh's hardness

9~9.5

Melting point

1900℃ , Usually decomposed at 1900℃ at normal pressure

Thermal expansivity

2.8~3.2×10-6/℃ (20~1000℃)

Heat capacity

0.71J/(g·K)

Thermal conductivity

15~ 20W/(m·K)

Modulus of elasticity

300~320 GPa

Fracture toughness

6.0~7.0 MPa.m

Flexural strength

650~750 Mpa

Webpark Module

10~12

Solubility

Insoluble in water.Solute in hydrofluoric acid

oxidizing temperature

The temperature of starting oxidation in the air is 1300 to 1400℃

 

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