Technical Parameter

  Zirconia(ZrO2) single crystal wafer is one of the most early high temperature superconducting substrate. Because Zirconia needs to be dopped with yttrium to stable its structure, normally the dopped yttrium dopped Zirconia(YSZ) single crystal is used. The mechanical stability and chemical stability of YSZ is excellent, and it has relatively lower price, which is especially applicable in making positive film.

  Parameters

  

Structure

Cubic

Growth Method

Electric-Arc fusion Method

Lattice Constant

a=5.147Å

Melting Point

2700℃

Density

6.0g/cm3

Hardness (Mho)

8-8.5

Purity

99.99%

Thermal Expansion Coefficient

10.3×10-6/℃

Dielectric constant

ε=27

Size

10×3mm, 10×5mm, 10×10mm, 15×15mm, 20×15mm, 20×15mm

Customize size and crystal orientation upon request

Thickness

0.5mm,1.0mm

Dimensional Tolerance

<±0.1mm

Thickness tolerance

<±0.015m, ±0.005mm for special needs)

Polishing

Single polishing or double polishing

Crystal Orientation

<100>、<110>、<111> etc.

Crystal Orientaion Tolerance

±0.5°

Edge Orientation Accuracy

2°(1°for special needs)

Chamfered Wafer

Wafer edge orientation can be customized from1°~45° upon special request

Package

Class 100 clean bag, Class 1000 super clean room

 

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