| Main performance parameters |
| Crystal structure | Quartet |
| Crystal growth method | Czochralski technology |
| Lattice constant | a=3.756Å c=12.63 Å |
| Melting point（℃） | 1650 |
| Density | 5.92（g/cm3） |
| Hardness | 6-6.5（mohs） |
| dielectric coefficient | ε=16.8 |
| Size | 10x3，10x5，10x10，15x15，，20x15，20x20， |
| Ф15,Ф20，Ф1″，Ф2″,Ф2.6″ |
| Thickness | 0.5mm，1.0mm |
| Polishing | Single-sided or double-sided |
| Crystal orientation | ＜001＞ |
| Crystal plane orientation accuracy | ±0.5° |
| Edge orientation accuracy | 2°（Special requirements can reach within 1°） |
| Bevel wafer | According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed |
| Ra: | ≤5Å（5µm×5µm） |
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| Package | Class 100 clean bag, Class 1000 super clean room |
