Technical Parameter

Lanthanum aluminate (LaAlO3) single crystal is currently the most important industrialized, large-size single crystal material for high-temperature superconducting thin film substrates. It is grown by the Czochralski method, and single crystals and substrates with a diameter of 2 inches and larger can be obtained. It matches well with high-temperature superconducting materials and lattices such as YBaCuO, has low dielectric constant and low microwave loss, so it is suitable for making high-temperature superconducting microwave electronic devices (such as high-temperature superconducting microwave filters in telecommunication). There are huge reality and potential application prospects.

 

Main performance parameters

Crystal structure

M6normal  temperature

M3>435℃

Lattice constant

M6 a=5.357A   c=13.22 A

M3 a=3.821 A

Melting point

2080

Density

6.52g/cm3

Hardness

6-6.5mohs

Thermal expansion coefficient

9.4x10-6/℃

Dielectric constants

ε=21

Secant loss10ghz)

3×10-4@300k,0.6×10-4@77k

Color and appearance

To anneal and conditions differ from brown to brownish
The polished substrate has natural twin domains

Chemical stability

Room temperature is not dissoluble in minerals, the temperature is greater than 150 ℃ in soluble h3po4

Characteristics

For microwave electron device

Growth method

Czochralski method

Size

 

10x310x510x1015x15,,20x1520x20

Ф15,Ф20Ф1″Ф2″,Ф2.6″

Thickness

0.5mm1.0mm

Polishing

Single-sided or double-sided

Crystal orientation

100  110  111

Crystal plane orientation accuracy

±0.5°

Edge orientation accuracy

Special requirements can reach within 1°

Bevel wafer

According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed

Ra:

≤5Å5µm×5µm

Package

Class 100 clean bag, Class 1000 super clean room

 

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