Technical Parameter

  As one of the most important compound semiconductor materials, InP single crystal materials are key materials for the production of InP-based laser diodes (LD), light-emitting diodes (LEDs) and photodetectors in optical communications. These devices realize the emission of information in optical fiber communications, Dissemination, amplification, acceptance and other functions. InP is also very suitable for high-frequency devices, such as high electron mobility transistors (HEMT) and heterojunction bipolar transistors (HBT). Due to its superior characteristics, it is used in optical fiber communication, microwave, millimeter wave, anti- Many high-tech fields such as radiant solar cells and heterojunction transistors are widely used. The main growth methods of InP single crystal materials include traditional liquid-sealed Czochralski technology (LEC), improved LEC technology, and gas pressure controlled Czochralski technology (VCZ). /PC-LEC)/Vertical Gradient Solidification Technology (VGF)/Vertical Bridgman Technology (VB), etc.

  

Crystal

Structure

Crystal orientation

Melting point oC

density g/cm3

Forbidden band width

 

InP

cube,

a=5.869 A

<100>

1600

4.79

1.344

 
 
 
 

Main performance parameters

Single Crystal

Dopant

Conduction Type

Carrier Concentration

cm-3

Mobility (cm2/V.s)

Dislocation density (cm-2)

Standard substrate

InP

Undoped

N

(0.4-2)´1016

(3.5-4)´103

£5´104

Φ2″×0.35mm

Φ3″×0.35mm

InP

S

N

(0.8-3)´1018

(4-6)´1018

(2.0-2.4)´103

(1.3-1.6)´103

£ 3´104

£2´103

Φ2″×0.35mm

Φ3″×0.35mm

InP

Zn

P

(0.6-2) ´1018

70-90

£ 2´104

Φ2″×0.35mm

Φ3″×0.35mm

InP

Te

N

107-108

³2000

£3´104

Φ2″×0.35mm

Φ3″×0.35mm

Size(mm)

Dia50.8x0.35mm,10×10×0.35mm、10×5×0.35mm

Can be customized according to customer needs, special direction and size of the substrate.

Surface roughness

Surface roughness(Ra):<=5A
Atomic particle microscope ( AFM ) test report can be provided

Polishing

Single-sided or double-sided

Package

Class 100 clean bag, Class 1000 super clean room

               
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